DocumentCode :
1787808
Title :
Study of gallium nitride surface treatment prior to PE CVD SiNx:H passivation
Author :
Parfenova, Maria A. ; Protasov, D.Yu. ; Malin, T.V. ; Nastoviak, Artem E. ; Devyatova, Svetlana F. ; Zhuravlev, K.S.
Author_Institution :
ISP, Novosibirsk, Russia
fYear :
2014
fDate :
June 30 2014-July 4 2014
Firstpage :
36
Lastpage :
38
Abstract :
The PE NH3 pretreatment followed by the wet chemical cleaning of GaN surface in an aqueous solution on the base of NH4OH, HCl and HF prior to PE CVD SiNx:H passivation allowed to improve electrophysical characteristics MIS-structures formed on GaN.
Keywords :
III-V semiconductors; MIS structures; gallium compounds; hydrogen; passivation; plasma CVD; silicon compounds; surface cleaning; wide band gap semiconductors; GaN; HCl; HF; MIS-structures; PE NH3 pretreatment; PECVD passivation; SiNx:H; aqueous solution; electrophysical characteristics; gallium nitride surface treatment; wet chemical cleaning; Gallium nitride; Passivation; Plasmas; Silicon compounds; Surface cleaning; gallium nitride; passivation; thin layers PE CVD SiNx:H;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
ISSN :
2325-4173
Print_ISBN :
978-1-4799-4669-3
Type :
conf
DOI :
10.1109/EDM.2014.6882471
Filename :
6882471
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1787808
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