Two-dimensional modeling the process of thermal oxidation of non-planar silicon structures in CMOS-circuits´ isolation

Author

Egorkin, Andrey V. ; Kalinin, S.V.

Author_Institution

Join stock Co. “Novosibirsk Semicond. Device Plant & Design Bur.”, Novosibirsk, Russia

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

61

Lastpage

66

Abstract

Two-dimensional model of the silicon thermal oxidation in the application SProcess of the program environment TCAD SenTaurus is developed. The most correct model, which quiet accurate describes different “delicate” effects of the thermal oxidation of nonplanar silicon surfaces, is described, identified and optimized. It is shown that to provide this appropriateness of the modeling process an influence of number nonlinear mechanical effects should be taken into account.

Keywords

CMOS integrated circuits; circuit CAD; elemental semiconductors; integrated circuit modelling; oxidation; silicon; technology CAD (electronics); CMOS-circuit isolation; Si; TCAD SenTaurus program environment; application SProcess; nonplanar silicon structures; nonplanar silicon surfaces; number nonlinear mechanical effects; silicon thermal oxidation process; two-dimensional modeling; Equations; Mathematical model; Oxidation; Silicon; Strain; Stress; SProcess; TCAD SenTaurus; Thermal oxidation; silicon dioxide; two-dimensional modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on

Conference_Location

Novosibirsk

ISSN

2325-4173

Print_ISBN

978-1-4799-4669-3

Type

conf

DOI

10.1109/EDM.2014.6882478

Filename

6882478