Effect of magnetic field on the sensitivity of PbSnTe:In films to THz radiation

Author

Epov, Vladimir S. ; Klimov, Alexander E. ; Kubarev, V.V. ; Paschin, Nikolai S. ; Shumsky, Vladimir N.

Author_Institution

Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

81

Lastpage

84

Abstract

The variation of conductivity and charge-carrier concentration in PbSnTe:In films with magnetic-field strength in samples exposed to illumination with free-electron-laser radiation at wavelengths λ=138.5 μm and 200 μm and, in addition, to illumination in the fundamental absorption band of the material, was examined. At certain magnetic-field strengths, measured dependences exhibited distinct maxima; the emergence of those maxima was interpreted within the concept of a quasi-continuous energy spectrum of traps for charge carriers in the band-gap of PbSnTe:In.

Keywords

IV-VI semiconductors; carrier density; electrical conductivity; energy gap; indium; lead compounds; magnetic field effects; semiconductor thin films; tin compounds; PbSnTe:In; THz radiation sensitivity; absorption band; band gap; charge carrier trap; charge-carrier concentration; electrical conductivity; free-electron-laser radiation; magnetic-field strength; quasicontinuous energy spectrum; thin films; wavelength 138.5 mum; wavelength 200 mum; Absorption; Electron traps; Films; Lighting; Magnetic fields; Physics; Sensitivity; PbSnTe:In; THz radiation; magnetic field; photocurrent; traps;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on

Conference_Location

Novosibirsk

ISSN

2325-4173

Print_ISBN

978-1-4799-4669-3

Type

conf

DOI

10.1109/EDM.2014.6882482

Filename

6882482