Title :
Single-Event and Radiation Effect on Enhancement Mode Gallium Nitride FETs
Author :
Lidow, A. ; Nakata, A. ; Rearwin, M. ; Strydom, J. ; Zafrani, A.M.
Author_Institution :
Efficient Power Conversion Corp., El Segundo, CA, USA
Abstract :
This paper presents responses of the latest MiGaN FETs to space radiation conditions. The new MiGaN has shown radiation tolerance to 1Mrad TID and SEGR and SEB immunity at LET of 85Mev/(mg/cm2) as well as immunity to displacement damage and Low dose (ELDRs) testing.
Keywords :
III-V semiconductors; field effect transistors; gallium compounds; radiation hardening (electronics); wide band gap semiconductors; ELDR immunity; GaN; LET; displacement damage immunity; enhancement mode FET; low dose testing immunity; radiation effect; single-event effect; space radiation conditions; Field effect transistors; Gallium nitride; Logic gates; Neutrons; Power conversion; Silicon; Testing;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2014 IEEE
Conference_Location :
Paris
Print_ISBN :
978-1-4799-5883-2
DOI :
10.1109/REDW.2014.7004594
