Title :
Room-temperature wafer bonding with smooth Au thin film in ambient air using Ar RF plasma activation
Author :
Okumura, Katsuhiro ; Higurashi, Eiji ; Suga, Takashi ; Hagiwara, Kazuki
Author_Institution :
Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
Quartz glass wafers with smooth Au thin film (thickness: 30 nm, surface roughness Ra: 0.34 nm) were successfully bonded in ambient air at room temperature after Ar RF plasma activation process. The room temperature bonded glass wafers without any heat treatment showed a sufficiently high die-shear strength of 47~70 MPa. The application of this process to heterogeneous integration of GaAs on SiC enables improved thermal management in high power semiconductor lasers.
Keywords :
III-V semiconductors; gallium arsenide; gold; metallic thin films; plasma materials processing; power semiconductor devices; semiconductor heterojunctions; semiconductor lasers; shear strength; silicon compounds; surface treatment; thermal management (packaging); wafer bonding; wide band gap semiconductors; Ar; Ar RF plasma activation; Au; GaAs-SiC; SiO2; ambient air; die-shear strength; heterogeneous integration; high power semiconductor lasers; quartz glass wafers; room-temperature wafer bonding; smooth gold thin film; temperature 293 K to 298 K; thermal management; wafer-scale bonding; Bonding; Glass; Gold; Plasma temperature; Radio frequency; Surface treatment;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4799-5260-1
DOI :
10.1109/LTB-3D.2014.6886165
