Surface activated bonding method applied in MEMS pressure sensor with TSV structures

As one of the traditional bonding method, thermo-compression bonding has the problem of process incompatibility and mechanical instability due to the high bonding temperature. Surface activated bonding (SAB) method can solve such problems by a very low bonding temperature. Oxide layer and contaminations for the normal surface are removed by specific method such as FAB treatment or plasma treatment. When two activated surfaces are brought into contact, clean surfaces are bonded together by atomic force. In this paper, the design and the fabrication of pressure sensor chip with TSV structures would be given, and the details of the surface activated bonding would be given. The results of the bonding would be carefully studied. The SAB method would be compared with thermo-compression bonding in some aspects such as bonding strength, bonding interface condition, etc.