Effect of transparent conductive oxide material and frontal interface on characteristics of Si:H p-i-n junction

Author

Martinez, H.E. ; Kosarev, A.

Author_Institution

Electron. Dept., Inst. Nac. de Astrofis., Opt. y Electron., Tonantzintla, Mexico

fYear

2014

fDate

Sept. 29 2014-Oct. 3 2014

Firstpage

1

Lastpage

4

Abstract

In this work we study the influence of frontal interface modification with titanium and carbon layers between p⁺-layer and transparent conductive oxide (TCO). Indium titanium oxide (ITO) and zinc oxide doped by aluminum (AZO) are used as TCO. Impact on performance characteristics is determined by current voltage measurements in dark and under AM1.5 illumination together with spectral measurements in the range of hν = 1.5 to 3.5 eV. The Si:H p-i-n structures with carbon film inserted between TCO and p⁺ layer as window show increase of the short circuit current by 37% compared to those without carbon film due to enhancement of short wavelength response.

Keywords

aluminium; carbon; elemental semiconductors; hydrogen; indium compounds; p-n junctions; silicon; zinc compounds; AM1.5 illumination; ITO; Si:H; ZnO:Al; carbon film; current-voltage measurements; electron volt energy 1.5 eV to 3.5 eV; frontal interface modification; p-i-n junction; p⁺-layer; short circuit current; spectral measurements; transparent conductive oxide material; Carbon; Current measurement; Films; Indium tin oxide; Lighting; PIN photodiodes; Photovoltaic cells; TCO; frontal; interface; pin; spectral;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering, Computing Science and Automatic Control (CCE), 2014 11th International Conference on

Conference_Location

Campeche

Print_ISBN

978-1-4799-6228-0

Type

conf

DOI

10.1109/ICEEE.2014.6978269

Filename

6978269