Title :
Effect of transparent conductive oxide material and frontal interface on characteristics of Si:H p-i-n junction
Author :
Martinez, H.E. ; Kosarev, A.
Author_Institution :
Electron. Dept., Inst. Nac. de Astrofis., Opt. y Electron., Tonantzintla, Mexico
fDate :
Sept. 29 2014-Oct. 3 2014
Abstract :
In this work we study the influence of frontal interface modification with titanium and carbon layers between p+-layer and transparent conductive oxide (TCO). Indium titanium oxide (ITO) and zinc oxide doped by aluminum (AZO) are used as TCO. Impact on performance characteristics is determined by current voltage measurements in dark and under AM1.5 illumination together with spectral measurements in the range of hν = 1.5 to 3.5 eV. The Si:H p-i-n structures with carbon film inserted between TCO and p+ layer as window show increase of the short circuit current by 37% compared to those without carbon film due to enhancement of short wavelength response.
Keywords :
aluminium; carbon; elemental semiconductors; hydrogen; indium compounds; p-n junctions; silicon; zinc compounds; AM1.5 illumination; ITO; Si:H; ZnO:Al; carbon film; current-voltage measurements; electron volt energy 1.5 eV to 3.5 eV; frontal interface modification; p-i-n junction; p+-layer; short circuit current; spectral measurements; transparent conductive oxide material; Carbon; Current measurement; Films; Indium tin oxide; Lighting; PIN photodiodes; Photovoltaic cells; TCO; frontal; interface; pin; spectral;
Conference_Titel :
Electrical Engineering, Computing Science and Automatic Control (CCE), 2014 11th International Conference on
Conference_Location :
Campeche
Print_ISBN :
978-1-4799-6228-0
DOI :
10.1109/ICEEE.2014.6978269
