Title :
A radiation-hardened CMOS 177K gate array having libraries compatible with commercial ones
Author :
Ohsono, Katsuhiro ; Kokubun, Tetsuya ; Morioka, Shoji ; Hirata, Masaki ; Ochi, Katsura ; Arimitu, Toshifumi ; Suzuki, Shunichi ; Uesugi, Masato ; Hada, Takashi ; Tamura, Takashi ; Kuboyama, Satoshi ; Matsuda, Sumio
Author_Institution :
Syst. LSI Dev. Div., NEC Corp., Sagamihara, Japan
Abstract :
A radiation-hardened CMOS gate array, which is library-compatible with commercial ones, has been developed using 1.0 μm CMOS process technology. This gate array has 177K raw-gates and over 100K gates of them are usable. Also it has a radiation tolerance over 105 rad (Si).
Keywords :
CMOS logic circuits; cellular arrays; integrated circuit layout; leakage currents; logic arrays; radiation effects; radiation hardening (electronics); 1 micron; 1E5 rad; CMOS gate array; CMOS process technology; commercial library-compatible; radiation tolerance; radiation-hardened gate array; Boron; CMOS process; CMOS technology; Large scale integration; Leakage current; Libraries; MOSFETs; National electric code; Testing; Threshold voltage;
Conference_Titel :
Radiation Effects Data Workshop, 1994 IEEE
Print_ISBN :
0-7803-2022-0
DOI :
10.1109/REDW.1994.633034
