DocumentCode
180443
Title
Future of GaN RF Technology in Europe
Author
Blanck, H. ; Splettstober, J. ; Floriot, D.
Author_Institution
United Monolithic Semicond. GmbH, Ulm, Germany
fYear
2014
fDate
19-22 Oct. 2014
Firstpage
1
Lastpage
4
Abstract
In the last years GaN has remained a key technology in Europe in particular, but not only, for RF Applications. After an intensive period of research and development the scope has shifted towards industrialization and product development. This is especially true for the applications up to around 20GHz where systems are now being built using European GaN-based components. At the same time, an increasing part of the research activity has moved toward higher frequencies beyond 20GHz.
Keywords
III-V semiconductors; gallium compounds; product development; research and development; semiconductor industry; wide band gap semiconductors; Europe; GaN; RF technology; industrialization; product development; research and development; Europe; Gallium nitride; HEMTs; MMICs; Materials; Microwave technology; Performance evaluation;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location
La Jolla, CA
Type
conf
DOI
10.1109/CSICS.2014.6978556
Filename
6978556
Link To Document