• DocumentCode
    180443
  • Title

    Future of GaN RF Technology in Europe

  • Author

    Blanck, H. ; Splettstober, J. ; Floriot, D.

  • Author_Institution
    United Monolithic Semicond. GmbH, Ulm, Germany
  • fYear
    2014
  • fDate
    19-22 Oct. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In the last years GaN has remained a key technology in Europe in particular, but not only, for RF Applications. After an intensive period of research and development the scope has shifted towards industrialization and product development. This is especially true for the applications up to around 20GHz where systems are now being built using European GaN-based components. At the same time, an increasing part of the research activity has moved toward higher frequencies beyond 20GHz.
  • Keywords
    III-V semiconductors; gallium compounds; product development; research and development; semiconductor industry; wide band gap semiconductors; Europe; GaN; RF technology; industrialization; product development; research and development; Europe; Gallium nitride; HEMTs; MMICs; Materials; Microwave technology; Performance evaluation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
  • Conference_Location
    La Jolla, CA
  • Type

    conf

  • DOI
    10.1109/CSICS.2014.6978556
  • Filename
    6978556