Progress on Phase Separation Microfluidics

Author

Agonafer, Damena D. ; Palko, James ; Yoonjin Won ; Lopez, Ken ; Dusseault, Tom ; Gires, Julie ; Asheghi, Mehdi ; Santiago, Juan G. ; Goodson, Kenneth E.

Author_Institution

Mech. Eng. Dept., Stanford Univ., Stanford, CA, USA

fYear

2014

fDate

19-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

High power density GaN HEMT technology can increase the capability of defense electronics systems with the reduction of CSWaP. However, thermal limitations have currently limited the inherent capabilities of this technology where transistor-level power densities that exceed 10 kW/cm2 are electrically feasible. This paper introduces the concept of an evaporative microcooling device utilizing some of the current two-phase vapor separation technologies currently being developed for water and dielectric liquids.

Keywords

III-V semiconductors; dielectric liquids; gallium compounds; high electron mobility transistors; microfluidics; wide band gap semiconductors; CSWa reduction; GaN; current two-phase vapor separation technologies; defense electronics systems; dielectric liquids; evaporative microcooling device; high power density HEMT technology; microfluidics; transistor-level power densities; water liquids; Copper; Films; HEMTs; Liquids; Resistance heating;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE

Conference_Location

La Jolla, CA

Type

conf

DOI

10.1109/CSICS.2014.6978575

Filename

6978575