• DocumentCode
    180496
  • Title

    The Impact of Electro-Thermal Coupling on HBT Power Amplifiers

  • Author

    Ozalas, Matthew T.

  • Author_Institution
    Keysight Technol., Santa Rosa, CA, USA
  • fYear
    2014
  • fDate
    19-22 Oct. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Thermal issues pose significant challenges for today´s RF power amplifier designs. Recently, layout-based electro-thermal simulation tools have become widely available across the industry. While these tools are most commonly used for device-level reliability and lifetime verification, electro-thermal simulation can also enable engineers to gain new insight into the performance effects that are brought on by cross-circuit thermal coupling in RF power amplifiers. This paper describes the use of electro-thermal simulation to understand, predict, and account for cross-circuit thermal coupling in a commercial HBT power amplifier. Specifically, electro-thermal analysis is used to analyze how thermal coupling impacts gain compression and low frequency memory effects.
  • Keywords
    heterojunction bipolar transistors; radiofrequency power amplifiers; semiconductor device models; semiconductor device reliability; HBT power amplifiers; RF power amplifier; cross-circuit thermal coupling; device level reliability; electrothermal analysis; electrothermal coupling; gain compression; layout-based electrothermal simulation tools; lifetime verification; low frequency memory effects; Couplings; Heterojunction bipolar transistors; Integrated circuit modeling; Power amplifiers; Radio frequency; Temperature; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
  • Conference_Location
    La Jolla, CA
  • Type

    conf

  • DOI
    10.1109/CSICS.2014.6978582
  • Filename
    6978582