X-Ku Wide-Bandwidth GaN HEMT MMIC Amplifier with Small Deviation of Output Power and PAE

Author

Niida, Yoshitaka ; Kamada, Yoichi ; Ohki, T. ; Ozaki, S. ; Makiyama, Kozo ; Okamoto, N. ; Sato, Mitsuhisa ; Masuda, Shin ; Watanabe, K.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2014

fDate

19-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

A new design methodology was proposed to obtain wide-bandwidth and flat-group-delay reactive-matching GaN HEMT MMIC amplifiers. Frequency dependence of the optimal source and load impedance of a GaN HEMT are derived as polynomial equations and matching circuits are designed by small signal simulation without the use of large-signal transistor model and large-signal simulation. Fabricated GaN HEMT MMIC amplifiers, which show a small deviation of Pout and PAE in the range of 8-18 GHz, prove that our methodology is suitable for the design of a wide-bandwidth MMIC amplifier.

Keywords

III-V semiconductors; MMIC amplifiers; gallium compounds; high electron mobility transistors; polynomials; semiconductor device models; wide band gap semiconductors; GaN; GaN HEMT MMIC amplifier; X-Ku wide-bandwidth; flat-group-delay reactive-matching; frequency 8 GHz to 18 GHz; frequency dependence; large-signal transistor; load impedance; matching circuits; optimal source; output power; polynomial equations; power added efficiency; small deviation; small signal simulation; Gallium nitride; HEMTs; Impedance; Integrated circuit modeling; Load modeling; MMICs;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE

Conference_Location

La Jolla, CA

Type

conf

DOI

10.1109/CSICS.2014.6978586

Filename

6978586