A High-Density Ternary Content-Addressable Memory Using Single-Electron Transistors

This paper presents a circuit design of a Ternary Content-Addressable Memory (TCAM) using Single- Electron Transistors (SETs). The proposed TCAM cell employs a SET-based ternary memory and a dual-gate SET for ternary data matching. The multi-level functionality of SET is fully utilized to reduce circuit complexity. Basic matching operation of the TCAM cell is verified using a multi-gate SET and a MOSFET fabricated on the same Silicon-On-Insulator (SOI) wafer by Pattern-Dependent OXidation (PADOX) process.