DocumentCode :
1807548
Title :
A pHEMT power amplfier with an on-off modulator
Author :
Hao-Shun Yang ; Li-Wei Lin ; Chen, Yi-Jan Emery
Author_Institution :
Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2013
fDate :
21-23 Jan. 2013
Firstpage :
45
Lastpage :
47
Abstract :
This paper presents a transformer-based switching-type RF power amplifier with an on-off modulator using a 0.15-μm pHEMT process. In order to overcome the inherent limitation of ground potential at the source node of transistor models in this pHEMT process, an on-off modulator was designed for the proposed pulse-modulated polar transmitter system. Measurement using a single-tone signal at 2.2 GHz and a 3.8-V supply, this pHEMT power amplifier with the proposed on-off modulator under full turn-on condition achieves 50.1% efficiency at 26.7-dBm output power level. Moreover, it achieves 45.3% efficiency at 23.7 -dBm output power level under the half turn-on condition. Furthermore, the isolation of this system at the peak output power level under full turn-off condition is 23.3 dB which is much better than using gate bias control to switch the cell of power transistors.
Keywords :
HEMT integrated circuits; UHF power amplifiers; microwave integrated circuits; modulators; frequency 2.2 GHz; on-off modulator; pHEMT power amplifier; size 0.15 mum; transformer based switching type RF power amplifier; voltage 3.8 V; Logic gates; Modulation; PHEMTs; Power amplifiers; Radio frequency; Switches; RF power amplifiers; microwave amplifiers; pHEMT; radio transmitters; transformer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-1552-4
Electronic_ISBN :
978-1-4673-1551-7
Type :
conf
DOI :
10.1109/SiRF.2013.6489427
Filename :
6489427
Link To Document :
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