Title :
Synthesis and characterization of ta-C films by PLD using camphoric carbon target
Author :
Rusop, M. ; Nezasa, T. ; Kinugawa, T. ; Soga, T. ; Jimbo, T.
Author_Institution :
Dept. of Environ. Technol. & Urban Planning, Nagoya Inst. of Technol., Japan
Abstract :
The tetrahedral carbon (ta-C) films have been grown by pulsed laser deposition (PLD) using camphoric carbon target at room temperature. The deposited films have been investigated using standard measurement techniques and the effects of diamond percentages by weight in the target (Dwt%) are discussed. The optical gap (Eg) and electrical resistivity (ρ) increase in Dwt% from 0.95 eV and 5.33×105 [Ω-cm], respectively, for the film deposited using target without Dwt% (sample A) up to 1.6 eV and 5.63×107 [Ω-cm], respectively, for the film deposited using target with 50 Dwt%. The structure of ta-C films was affected due to the increase of Dwt% and a large portion of sp3-bonds content resulted in high optical gap and resistivity, and it is clear that the Dwt% affects the grain size in particular. We found the Dwt% have modified the tetrahedral (sp3) bonds content and the morphology of the carbon films.
Keywords :
bonds (chemical); diamond; electrical resistivity; elemental semiconductors; energy gap; grain size; optical constants; pulsed laser deposition; semiconductor growth; semiconductor thin films; surface morphology; 293 to 298 K; C; PLD; camphoric carbon target; carbon film morphology; diamond; electrical resistivity; film structure; grain size; optical gap; pulsed laser deposition; room temperature; tetrahedral sp3-bonds; tetrahedral-C films; Conductivity; Discrete wavelet transforms; Electric resistance; Grain size; Measurement standards; Measurement techniques; Optical films; Optical pulses; Pulsed laser deposition; Temperature;
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
DOI :
10.1109/SMELEC.2002.1217837