Title :
Low-power CMOS inductorless bandwidth-enhanced transimpedance amplifier for short-haul applications
Author :
Taghavi, Mohammad Hossein ; Ahmadi, Pouyan ; Belostotski, Leonid ; Haslett, J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB, Canada
Abstract :
A new technique using parallel current-based circuits and resistive compensation to realize an inductorless transimpedance amplifier (TIA) with enhanced bandwidth is introduced. An example TIA implemented in 0.13μm 1.2V standard CMOS achieves 3dB bandwidth of 11.2GHz when driven by a large 500fF photodiode capacitance. This design enhances the bandwidth by a factor of 3.86 with less than 0.1dB gain ripple, achieving the highest figure of merit among published 20Gb/s inductorless 0.13μm CMOS designs for short-haul applications.
Keywords :
CMOS analogue integrated circuits; integrated circuit design; low-power electronics; microwave amplifiers; microwave integrated circuits; operational amplifiers; photodiodes; TIA; bandwidth 11.2 GHz; bit rate 20 Gbit/s; capacitance 500 fF; figure of merit; gain 3 dB; low-power CMOS inductorless bandwidth-enhanced transimpedance amplifier; parallel current-based circuit; photodiode capacitance; resistive compensation; short-haul application; size 0.13 mum; voltage 1.2 V; Bandwidth; CMOS integrated circuits; CMOS technology; Capacitance; Noise; Photodiodes;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-1552-4
Electronic_ISBN :
978-1-4673-1551-7
DOI :
10.1109/SiRF.2013.6489428
