Title :
A CMOS IQ direct digital RF modulator with embedded RF FIR-based quantization noise filter
Author :
Gaber, Wagdy M. ; Wambacq, Piet ; Craninckx, Jan ; Ingels, Mark
Author_Institution :
Imec, Leuven, Belgium
Abstract :
This paper presents a new approach to reduce the out of band quantization noise of Direct Digital RF Modulators (DDRM). The DDRM is organized in a FIR-like configuration to filter the quantization noise in the RX band directly at RF. To demonstrate the principle, a 0.9 GHz FIR IQ DDRM has been integrated in 130 nm CMOS. The transmitter achieves more than 22 dB reduction in the quantization noise floor to reach -152 dBc/Hz@20 MHz with a 200 kHz baseband tone. The actual DDRM is capable of both amplitude and phase modulation by using a new four-phases IQ architecture. This results in a reduced power consumption and chip area. The transmitter consumes 94 mW from a 2.7 V supply and achieves an average output power of 9.5 dBm. Leakage into the adjacent channel and into the next one of -35 dB and -53 dB, respectively have been measured for a 10 MHz OFDM signal. It also achieves -27.2 dB EVM with a 64QAM input signal.
Keywords :
CMOS integrated circuits; OFDM modulation; modulators; 64QAM input signal; CMOS IQ direct digital RF modulator; FIR IQ DDRM; FIR-like configuration; OFDM signal; RX band; band quantization noise; chip area; direct digital RF modulators; embedded RF FIR-based quantization noise filter; four-phases IQ architecture; frequency 0.9 GHz; frequency 200 kHz; phase modulation; power 94 mW; power consumption; quantization noise floor; size 130 nm; voltage 2.7 V; CMOS integrated circuits; Finite impulse response filter; Noise; OFDM; Quantization; Radio frequency; Transmitters;
Conference_Titel :
ESSCIRC (ESSCIRC), 2011 Proceedings of the
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0703-2
Electronic_ISBN :
1930-8833
DOI :
10.1109/ESSCIRC.2011.6044884