The dependence of gate current density and substrate bias on trapped electrons

In this paper an analysis is made on the effect of gate current density and substrate bias on trapped electrons of n-MOSFETs with different dielectric material. The charge pumping technique has been used to characterize the interface traps. The study of the selection of charge pumping parameters has been done experimentally in order to select the appropriate values of charge pumping parameters to be used in the analysis is presented in this paper.