Title :
A monolithic 2.45 GHz, 0.56 W power amplifier with 45% PAE at 2.4 V in standard 25 GHz fT Si-bipolar
Author :
Bakalski, W. ; Simbürger, W. ; Kehrer, D. ; Wohlmuth, H.D. ; Rest, M. ; Scholtz, A.L.
Author_Institution :
Inst. of Commun. & Radio-Frequency Eng., Tech. Univ. of Vienna, Austria
Abstract :
A monolithic radio frequency power amplifier for 2-2.6 GHz has been realized in a standard 25 GHz-fT Si-bipolar production technology. The balanced two-stage push-pull power amplifier uses two on-chip transformers as input-balun and for interstage matching and operates at supply voltages as low as 1 V. A new type of microstrip line balun acts as output matching network. At 1 V, 2.4 V, 3 V supply voltages output powers of 19 dBm, 27.5 dBm, 29.1 dBm are achieved at 2.45 GHz. The respective power added efficiency is 38%, 45%, 46%. The small-signal gain is 35 dB.
Keywords :
MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; baluns; bipolar MMIC; bipolar analogue integrated circuits; elemental semiconductors; impedance matching; integrated circuit design; silicon; 0.56 W; 1 to 3 V; 2 to 2.6 GHz; 2.4 V; 2.45 GHz; 25 GHz; 35 dB; 38 to 46 percent; Si; Si bipolar production technology; balanced two-stage amplifier; input-balun; interstage matching; microstrip line balun; monolithic RF power amplifier; on-chip transformers; output matching network; push-pull power amplifier; radio frequency power amplifier; Impedance matching; Low voltage; Microstrip; Network-on-a-chip; Power amplifiers; Power supplies; Production; Radio frequency; Radiofrequency amplifiers; Transformers;
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Print_ISBN :
0-7803-7448-7
DOI :
10.1109/ISCAS.2002.1010579
