Crystal growth of compound semiconductors with low dislocation densities

Author

Friedrich, Jochen ; Kallinger, Birgit ; Knoke, Isabel ; Berwian, Patrick ; Meissner, Elke

Author_Institution

Dept. Crystal Growth, Fraunhofer IISB, Erlangen

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

6

Abstract

This paper will highlight some technological developments in the field of Vertical Gradient Freeze growth of InP and GaAs for providing substrates with low dislocation densities. Furthermore, the role of micropipes and basal plane dislocations during sublimation and epitaxial growth of SiC will be addressed. Finally, different strategies will be illustrated to achieve GaN with high structural perfection.

Keywords

III-V semiconductors; crystal growth from vapour; dislocation density; epitaxial growth; gallium arsenide; gallium compounds; indium compounds; silicon compounds; wide band gap semiconductors; GaAs; GaN; InP; SiC; basal plane dislocations; compound semiconductors; crystal growth; dislocation densities; epitaxial growth; micropipes; structural perfection; sublimation; vertical gradient freeze growth; Crystals; Epitaxial growth; Gallium arsenide; Gallium nitride; Indium phosphide; Magnetic fields; Shape control; Silicon carbide; Substrates; Thermal stresses; GaAs; GaN; InP; SiC; VGF; dislocations; epitaxy; solution growth; sublimation growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702897

Filename

4702897