Title :
Differential absorption spectroscopy for vertically coupled InGaAs quantum dots of p-type modulation doping
Author :
Chuang, K.Y. ; Feng, David J. ; Chen, C.Y. ; Tzeng, T.E. ; Lay, T.S.
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ.
Abstract :
We report the differential absorption (Deltaalpha) spectra of the vertically coupled triple-layer InGaAs quantum dots (QDs) at different reverse bias. The results show that the decrease of spacer layer thickness increases the differential absorption. Adding p-type modulation doping further increases the differential absorption amplitude at ground state.
Keywords :
III-V semiconductors; electroluminescence; gallium arsenide; ground states; indium compounds; photoluminescence; semiconductor doping; semiconductor quantum dots; InGaAs; differential absorption spectra; electroluminescence; ground state; p-type modulation doping; photoluminescence; spacer layer thickness; vertically coupled triple-layer quantum dots; Absorption; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Pulse measurements; Quantum dot lasers; Quantum dots; Spectroscopy; Stationary state; different absorption; modulation doping; quantum dots;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702903
