Thinckness dependence of phase transition temperature of epitaxial ferroelectric films

Author

Zhang, Chun-zu ; Zhou, Zhi-dong ; Zhang, Ying

Author_Institution

Sch. of Archit. & Civil Eng., Xiamen Univ., Xiamen, China

fYear

2009

fDate

17-20 Dec. 2009

Firstpage

34

Lastpage

34

Abstract

Considering the electromechanical coupling boundary conditions, such as misfit strain in epitaxial ferroelectric thin films, surface eigenstrain relaxation and depolarization induced by surface charges, the phase transition temperature of epitaxial ferroelectric thin film is analyzed and discussed systematically via the dynamic Ginzburg-Landau equation (DGL). Linear stability analysis of the evolutionary trajectory of the system for the phase transition is adopted in this paper. Explicit expressions are then derived for the critical phase transition temperature under various electromechanical surface conditions. The important factors on phase transition temperature of ferroelectric films are discussed and compared with experimental data for BaTiO₃ thin film epitaxially grown on SrTiO₃ substrate.

Keywords

Curie temperature; Ginzburg-Landau theory; barium compounds; dielectric relaxation; epitaxial layers; ferroelectric thin films; ferroelectric transitions; piezoelectricity; strontium compounds; BaTiO₃; SrTiO₃; depolarization; dynamic Ginzburg-Landau equation; electromechanical coupling boundary condition; electromechanical surface condition; epitaxial ferroelectric thin film; linear stability analysis; misfit strain; phase transition temperature; surface charges; surface eigenstrain relaxation; Boundary conditions; Capacitive sensors; Civil engineering; Educational institutions; Electronic mail; Equations; Ferroelectric films; Ferroelectric materials; Temperature dependence; Transistors; Curie temperature; Ferroelectric thin films; boundary conditions; film thickness;

fLanguage

English

Publisher

ieee

Conference_Titel

Piezoelectricity, Acoustic Waves, and Device Applications (SPAWDA) and 2009 China Symposium on Frequency Control Technology, Joint Conference of the 2009 Symposium on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-4950-7

Type

conf

DOI

10.1109/SPAWDA.2009.5428968

Filename

5428968