Uniform (111) textured Cu CVD on vacuum annealed Cu seed layer

Author

Ueno, Kazuyoshi ; Sekiguchi, Atsushi ; Kobayashi, Akiko

Author_Institution

NEC Corp., Sagamihara, Japan

fYear

1998

fDate

1-3 Jun 1998

Firstpage

119

Lastpage

121

Abstract

The vacuum anneal effects of the Cu seed on Cu CVD have been investigated. The vacuum anneal removes the surface oxide of the air-exposed Cu seed and enhances the (111) texture of the seed. The incubation period which has been observed with the air-exposed Cu seed has been eliminated by the vacuum anneal and better film morphology and improved sheet resistance uniformity has been obtained. Epitaxial CVD has been observed on the vacuum annealed seed and led to the enhanced (111) texture

Keywords

annealing; chemical vapour deposition; copper; crystal morphology; electric resistance; integrated circuit interconnections; integrated circuit metallisation; oxidation; surface texture; Cu; Cu CVD; Cu seed; Cu(111) texture; CuO-Cu; air-exposed Cu seed; enhanced (111) texture; epitaxial CVD; film morphology; incubation period; sheet resistance uniformity; surface oxide; uniform textured Cu(111) CVD; vacuum anneal; vacuum anneal effects; vacuum annealed Cu seed layer; vacuum annealed seed; Annealing; Cooling; Fluctuations; Grain size; Impurities; Microstructure; Surface morphology; Surface resistance; Tin; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704768

Filename

704768