Short-circuit robustness of SiC Power MOSFETs: Experimental analysis

Author

Castellazzi, Alberto ; Fayyaz, Asad ; Li Yang ; Riccio, M. ; Irace, A.

Author_Institution

Machines & Control Group, Univ. of Nottingham, Nottingham, UK

fYear

2014

fDate

15-19 June 2014

Firstpage

71

Lastpage

74

Abstract

This paper proposes a thorough experimental characterization of the performance of commercially available SiC Power MOSFETs under short-circuit conditions. The purpose is to assess and understand the degradation process and the failure mechanisms that limit device reliability to identify optimal routes for subsequent technology development. This paper complements electro-thermal functional tests with structural characterization offering deeper insight into device technology related aspects.

Keywords

failure analysis; power MOSFET; semiconductor device reliability; short-circuit currents; silicon compounds; wide band gap semiconductors; SiC; degradation process; device reliability; device technology; electro-thermal functional tests; failure mechanisms; power MOSFETs; short-circuit conditions; short-circuit robustness; structural characterization; Degradation; Logic gates; MOSFET; Short-circuit currents; Silicon carbide; Stress; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on

Conference_Location

Waikoloa, HI

ISSN

1943-653X

Print_ISBN

978-1-4799-2917-7

Type

conf

DOI

10.1109/ISPSD.2014.6855978

Filename

6855978