650V superjunction MOSFET using universal charge balance concept through drift region

For a typical superjunction MOSFET (SJMOSFET) device, charge balance condition should be fully satisfied for the entire device area. This means that the specific superjunction pillar structure is needed according to each different design of top structures. This cumbersome situation of the conventional approach imposes severe constraints on device design as well as production. Therefore, to relieve the ineffectiveness associated with the typical SJMOSFET, a new charge balance scheme is required. In this work, we present an alternative way of realizing SJMOSFET. The new charge balance scheme makes the blocking characteristics of the SJMOSFET less sensitive to device designs and also shows very competitive device performance without any deterioration of ruggedness as well as switching characteristics.