Title :
A fully integrated power amplifier for 802.11a application
Author :
Peng, Yan-Jun ; Song, Jia-You ; Wang, Zhi-Gong
Author_Institution :
Inst. of RF-& OE-ICs, Southeast Univ., Nanjing
Abstract :
A fully integrated linear power amplifier (PA) for 5 GHz WLAN application has been realized in the OMMIC 0.2 mum AlGaAs/InGaAs/GaAs PHEMT process. The single-ended two-stage power amplifier uses on-chip inductors and capacitors for input, interstage and output matching. Under a single supply voltage of +3.5 V, this power amplifier exhibits linear output power of 26.9 dBm (P1dB), small signal gain of 28.6 dB and the power added efficiency (PAE) of 36.1% at P1dB. The die size is only 1.5 mm times 1.0 mm.
Keywords :
capacitors; inductors; power amplifiers; wireless LAN; OMMIC; PHEMT process; WLAN application; bandwidth 5 GHz; capacitors; fully integrated power amplifier; on-chip inductors; output matching; power added efficiency; size 0.2 mum; Capacitors; Gallium arsenide; Impedance matching; Indium gallium arsenide; Inductors; PHEMTs; Power amplifiers; Power generation; Voltage; Wireless LAN;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1879-4
Electronic_ISBN :
978-1-4244-1880-0
DOI :
10.1109/ICMMT.2008.4540727
