Controllability of switching speed and loss for SiC JFET/Si MOSFET cascode with external gate resistor

Author

Shimizu, Hiroshi ; Akiyama, Soramichi ; Yokoyama, Naoki ; Inomata, Hisao ; Kobayashi, Hideo ; Fujiki, Amanda ; Iijima, Toru ; Tomiyama, Kiyotaka ; Sasaki, Yutaka ; Ibori, Satoshi

Author_Institution

Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan

fYear

2014

fDate

15-19 June 2014

Firstpage

221

Lastpage

224

Abstract

The SiC JFET/Si MOSFET cascode is an attractive alternative to conventional Si MOSFETs or IGBTs due to its low on-resistance and good switching performance. However, dv/dt control without increased switching loss is difficult when using a conventional gate resistor or capacitor for the MOSFET. In this paper, a dv/dt and switching loss control method that ensures a good switching performance for the cascode with an external gate resistor for JFET, as well as for MOSFET, is presented.

Keywords

MOSFET; junction gate field effect transistors; silicon compounds; MOSFET; SiC; conventional gate resistor; on-resistance; silicon carbide JFET-silicon MOSFET cascode; switching loss; switching loss control method; switching performance; switching speed controllability; JFETs; Logic gates; MOSFET; Resistors; Silicon; Silicon carbide; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on

Conference_Location

Waikoloa, HI

ISSN

1943-653X

Print_ISBN

978-1-4799-2917-7

Type

conf

DOI

10.1109/ISPSD.2014.6856016

Filename

6856016