Simultaneous achievement of high-speed and low-noise performance of pseudomorphic InGaAs/InAlAs HEMTs

We achieved a minimum noise figure (NFmin) of 1.0 dB at a frequency of 90 GHz, a current gain cutoff frequency (f_T) of 520 GHz and a maximum oscillation frequency (f_max) of 425 GHz for a 35-nm-gate pseudomorphic In_0.7Ga_0.3As/In_0.52Al_0.48As high electron mobility transistor (HEMT) biased at a drain-source voltage (V_ds) of 0.8 V and a gate-source voltage (V_gs) of 0.0 V. The simultaneous achievement of high f_T, high f_max and low NF_min is the first demonstration for InGaAs/InAlAs HEMTs with over 500-GHz-f_T. Furthermore, an NF_min of 0.8 dB at 90 GHz was also obtained at V_ds = 0.8 V and V_gs = -0.1 V, which is one of the lowest values ever reported.