Title :
Dark current mechanisms in bulk GaInNAs photodiodes
Author :
Soong, W.M. ; Ng, J.S. ; Steer, M.J. ; Hopkinson, M. ; David, J.P.R. ; Chamings, J. ; Sweeney, S.J. ; Adams, A.R. ; Allam, J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield
Abstract :
We have grown a series of bulk GaInNAs p-i-n diodes and identified some of the dark current mechanisms present in our devices. With a nitrogen composition of ~4 %, the band gap can be reduced to 0.94 eV. We also demonstrate that low dark current density is achievable without compromising the absorption and hence quantum efficiency up to 1.4 mum.
Keywords :
III-V semiconductors; current density; dark conductivity; energy gap; gallium arsenide; gallium compounds; indium compounds; p-i-n photodiodes; GaInNAs; band gap; dark current density; p-i-n diodes; photodiodes; quantum efficiency; wavelength 1.4 mum; Dark current; Gallium arsenide; Gold; Indium; Nitrogen; P-i-n diodes; PIN photodiodes; Photonic band gap; Plasma temperature; Zinc; GaAs; GaInNAs; photodiode;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702987
