Title :
Improved trap-related characteristics on SiNx/AlGaN/GaN MISHEMTs with surface treatment
Author :
Yu-Syuan Lin ; King-Yuen Wong ; Lansbergen, G.P. ; Yu, J.L. ; Yu, C.J. ; Hsiung, C.W. ; Chiu, H.C. ; Liu, S.D. ; Chen, P.C. ; Yao, F.W. ; Su, R.Y. ; Chou, C.Y. ; Tsai, C.Y. ; Yang, F.J. ; Tsai, C.L. ; Tsai, C.S. ; Chen, Xia ; Tuan, H.C. ; Kalnitsky, Alex
Author_Institution :
RF & Specialty Technol. Div., Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan
Abstract :
In this paper, the reliable SiNx/AlGaN/GaN MISHEMTs on silicon substrate with improved trap-related characteristics have been well demonstrated. The devices with our proposed treatment method showed less deep-level traps and more Si surface donors at SiNx-AlGaN interface. The trap related device characteristics are also improved by using our optimized treatment method. The devices with proposed treatment method exhibit less current collapse and better positive bias temperature stability of threshold voltage. All the results suggest that the proposed treatment method is very effective to improve the slow-trap related device reliability.
Keywords :
III-V semiconductors; MISFET; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device reliability; silicon compounds; surface treatment; wide band gap semiconductors; MISHEMT; SiNx-AlGaN-GaN; deep-level trap-related characteristics; positive bias temperature stability; silicon substrate; slow-trap related device reliability; surface donor; surface treatment; trap related device characteristics; Aluminum gallium nitride; Dielectrics; Gallium nitride; Logic gates; Silicon; Stress; Surface treatment;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6856034
