Title :
Selective area growth engineering for 80nm spectral range AlGaInAs 10Gbit/s remote amplified modulator
Author :
Dupuis, N. ; Décobert, J. ; Jany, C. ; Alexandre, F. ; Garreau, A. ; Brenot, R. ; Lagay, N. ; Martin, F. ; Carpentier, D. ; Landreau, J. ; Pommereau, F. ; Poingt, F. ; Kazmierski, C.
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis
Abstract :
A selective area growth model was used to engineer a remote amplified modulator with an AlGaInAs multi-quantum well active layer. The selective mask layout was designed to fulfill special component requirements including +35 nm SOA gap detuning and low polarization dependence. The fabricated reflective device exhibits 10 dB maximum insertion gain and operates at 10 Gbit/s over 80 nm spectral range.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; integrated optics; semiconductor growth; semiconductor optical amplifiers; semiconductor quantum wells; AlGaInAs; SOA gap detuning; bit rate 10 Gbit/s; gain 10 dB; insertion gain; multi-quantum well active layer; polarization; reflective device; reflective electro-absorption modulator; remote amplified modulator; selective area growth model; selective mask layout; Absorption; Bandwidth; Electronic mail; III-V semiconductor materials; Optical fiber subscriber loops; Optical network units; Polarization; Predictive models; Semiconductor optical amplifiers; Wavelength division multiplexing; AlGaInAs; EAM; SOA; Selective Area Growth;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702993
