Title :
On the use of cryogenic measurements to investigate the potential of Si/SiGe:C HBTs for terahertz operation
Author :
Chevalier, P. ; Zerounian, N. ; Barbalat, B. ; Aniel, F. ; Chantre, Alain
Author_Institution :
STMicroelectron., Crolles
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
The transit times analysis, at room and cryogenic temperatures, of SiGe HBTs featuring various ftau/fmax trade-offs is performed. It allows to identify the principal development axes to reach half-terahertz at 300 K, a frequency already obtained at 40 K.
Keywords :
cryogenics; elemental semiconductors; heterojunction bipolar transistors; silicon; SiGe; cryogenic measurements; cryogenic temperatures; temperature 300 K; temperature 40 K; terahertz operation; transit times analysis; Cryogenics; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Performance analysis; Performance evaluation; Probes; Silicon germanium; Submillimeter wave measurements; Temperature; Cryogenic temperatures; SiGe HBT; terahertz;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1019-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351831
