Title :
Development of a self-aligned pnp HBT for a complementary thin-SOI SiGeC BiCMOS technology
Author :
Duvernay, Julien ; Brossard, F. ; Borot, G. ; Boissonnet, L. ; Vandelle, B. ; Rubaldo, L. ; Deleglise, F. ; Avenier, G. ; Chevalier, P. ; Rauber, B. ; Dutartre, D. ; Chantre, A.
Author_Institution :
STMicroelectron., Crolles
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
This paper describes the development of a thin-SOI pnp SiGeC HBT using a self-aligned selective epitaxy emitter/base architecture. Static and dynamic device characteristics are presented, and first results from a full 130 nm thin-SOI complementary SiGeC BiCMOS technology are reported.
Keywords :
BiCMOS integrated circuits; heterojunction bipolar transistors; silicon-on-insulator; BiCMOS technology; complementary thin-SOI BiCMOS technology; epitaxy emitter/base architecture; heterojunction bipolar transistors; pnp HBT; silicon-on-insulator; BiCMOS integrated circuits; CMOS technology; Costs; Epitaxial growth; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Silicon germanium; Substrates; BiCMOS integrated circuits technology; heterojunction bipolar transistors; pnp; silicon-germanium; silicon-on-isulator;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1019-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351833
