DocumentCode :
1814173
Title :
Transferred substrate DHBT of ft = 410 GHz and fmax = 480 GHz for traveling wave amplifiers
Author :
Kraemer, T. ; Meliani, C. ; Lenk, F. ; Wuerfl, J. ; Traenkle, G.
Author_Institution :
Ferdinand-Braun-Inst. fuer Hoechstfrequenztechnik, Berlin
fYear :
2008
fDate :
25-29 May 2008
Firstpage :
1
Lastpage :
3
Abstract :
We report a MMIC process in transferred substrate technology. The transistors of 0.8 times 5 mum2 emitter size feature ft = 410 GHz and fmax = 480 GHz at BVceo = 5.5 V. Traveling wave amplifiers of 12 dB broadband gain up to fc = 70 GHz were realized.
Keywords :
heterojunction bipolar transistors; travelling wave amplifiers; DHBT; MMIC; broadband gain; double heterojunction bipolar transistors; emitter size feature; frequency 410 GHz; frequency 480 GHz; frequency 70 GHz; gain 12 dB; transferred substrate technology; traveling wave amplifiers; voltage 5.5 V; Broadband amplifiers; Etching; Heterojunction bipolar transistors; Indium phosphide; MMICs; Millimeter wave communication; Millimeter wave technology; Substrates; Thermal conductivity; Wafer bonding; InP heterojunction bipolar transistor; distributed amplifier; millimeter-wave; transferred substrate; wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
ISSN :
1092-8669
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2008.4702999
Filename :
4702999
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1814173
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