Title :
A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications
Author :
Tominari, T. ; Miura, M. ; Shimamoto, H. ; Arai, M. ; Yoshida, Y. ; Sato, H. ; Aoki, T. ; Nonami, H. ; Wada, S. ; Hosoe, H. ; Washio, K. ; Hashimoto, T.
Author_Institution :
Hitachi, Ltd., Tokyo
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
A manufacturable 10V-BVcc/15GHz-fr complementary SiGe BiCMOS foundry process was developed for high-performance multi-media applications. A novel SiGe profile with a forward/backward stepped Ge profile and controllable emitter interface layer improved the SiGe PNP´s FOM to 620 GHz ldrV.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC; SiGe; complementary BiCMOS foundry process; controllable emitter interface layer; frequency 15 GHz; high-performance multimedia applications; high-speed analog applications; high-voltage analog applications; voltage 10 V; BiCMOS integrated circuits; Circuit testing; Design optimization; Driver circuits; Fabrication; Foundries; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Voltage; SiGe PNP; complementary SiGe BiCMOS; high breakdown voltage; process integration;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1019-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351834
