DocumentCode :
1814282
Title :
InP/GaAsSb/InP multifinger DHBTs for power applications
Author :
Nodjiadjim, V. ; Riet, M. ; Scavennec, A. ; Berdaguer, P. ; Drisse, O. ; Derouin, E. ; Godin, J. ; Bove, P. ; Lijadi, M.
Author_Institution :
III-V Lab., GIE Alcatel-Thales, Marcoussis
fYear :
2008
fDate :
25-29 May 2008
Firstpage :
1
Lastpage :
3
Abstract :
We report the performances of multifinger GaAsSb/InP double heterojunction bipolar transistors (DHBTs) designed for high power applications. 2-finger 15times1 mum2 devices demonstrate maximum fT of 221 GHz and maximum fmax of 293 GHz when biased at JC = 370 kA/cm2 and VCE = 1.4V. Moreover we investigate the limitation of frequency performances with the number of fingers.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power bipolar transistors; AC characteristics; DC characteristics; DHBTs; GaAsSb-InP; frequency 221 GHz; frequency 293 GHz; frequency performances; high power applications; multifinger double heterojunction bipolar transistors; voltage 1.4 V; Current density; Doping; Double heterojunction bipolar transistors; Fingers; Frequency; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Synthetic aperture sonar; Voltage; GaAsSb/InP double heterojunction bipolar transistors (DHBTs); multifinger DHBTs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
ISSN :
1092-8669
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2008.4703002
Filename :
4703002
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1814282
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