DocumentCode :
1814347
Title :
10 GHz modulation bandwidth of 1550nm InAs/InP Quantum Dash based lasers
Author :
Lelarge, F. ; Brenot, R. ; Rousseau, B. ; Martin, F. ; Poingt, F. ; LeGouezigou, L. ; Gouezigou, O. Le ; Derouin, E. ; Drisse, O. ; Pommereau, F. ; Accard, A. ; Caligaro, M. ; Make, D. ; Dagens, B. ; Provost, J.G. ; Krakowski, M. ; van-Dijk, F. ; Duan, G.
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis
fYear :
2008
fDate :
25-29 May 2008
Firstpage :
1
Lastpage :
4
Abstract :
A modulation bandwidth up to 10 GHz in continuous wave mode operation is demonstrated using optimized 1.55 mum InAs/InP (100) quantum dashes based lasers.
Keywords :
III-V semiconductors; indium compounds; optical modulation; quantum dash lasers; InAs-InP; bandwidth 10 GHz; continuous wave mode operation; modulation bandwidth; opto electronic devices; quantum dash based lasers; size 1.55 mum; wavelength 1550 nm; Bandwidth; Chemical lasers; Gas lasers; Indium phosphide; Laser mode locking; Laser stability; Molecular beam epitaxial growth; Quantum dot lasers; Quantum dots; Temperature; InP-based directly modulated lasers; Quantum dashes; gas source molecular beam epitaxy; opto electronic devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
ISSN :
1092-8669
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2008.4703005
Filename :
4703005
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1814347
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