Mode locking of optically pumped long wavelength InP-Based semiconductor disk lasers with GaInNAs saturable absorber

Author

Khadour, A. ; Bouchou, S. ; Aubin, G. ; Tourrenc, J.P. ; Miard, A. ; Harmand, J.C. ; Decobert, J. ; Oudar, J.L.

Author_Institution

Lab. de Photonique et de Nanostruct., Marcoussis

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

We have used a two quantum-well GaInNAs semiconductor saturable absorber mirror (SESAM) with a high power InP-based semiconductor disk laser to obtain a 2 GHz mode locked OP-VECSEL laser with a pulse width <20 ps.

Keywords

III-V semiconductors; gallium compounds; indium compounds; integrated optics; laser mirrors; laser mode locking; optical pumping; optical saturable absorption; quantum well devices; semiconductor lasers; GaInNAs-InP; OP-VECSEL laser; frequency 2 GHz; long wavelength semiconductor disk lasers; mode locking; optical pumping; quantum-well semiconductor saturable absorber mirror; Laser excitation; Laser mode locking; Mirrors; Optical pulses; Optical pumping; Power lasers; Pump lasers; Quantum well lasers; Semiconductor lasers; Space vector pulse width modulation; Passive mode-locking; SEmiconductor Saturable Absorber Mirror (SESAM); Vertical-External-Cavity Surface-Emitting Laser (VECSEL); external cavity; semiconductor laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703021

Filename

4703021