Title :
Fabrication, measurement and tuning of a photonic crystal H1-cavity in deeply etched InP/InGaAsP/InP
Author :
Kicken, H.H.J.E. ; Barbu, I. ; Gabriels, J. ; Der Heijden, R. W van ; Nötzel, R. ; Karouta, F. ; Salemink, H.W.M. ; van der Drift, E. ; Salemink, H.W.M.
Author_Institution :
COBRA Inter-Univ. Res. Inst. & Center for Nanomater., Eindhoven Univ. of Technol., Eindhoven
Abstract :
A point defect cavity (H1) was fabricated by deep etching in the InP/InGaAsP/InP system. The optical properties of the devices were experimentally investigated by transmission spectroscopy yielding a Q-factor of ~65. The resonance frequency of the defect cavity was shifted, by infiltrating the surrounding holes with both a polymer and liquid crystal. Furthermore, the transmission was enhanced by a factor > 5 as a result of the filling.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; integrated optics; liquid crystals; optical tuning; optical waveguides; photonic crystals; polymers; InP-InGaAsP-InP; Q-factor; acces waveguides; deep etching; liquid crystal; optical properties; photonic crystal H1-cavity; point defect cavity; polymer; resonance frequency; transmission spectroscopy; Etching; Indium phosphide; Liquid crystal polymers; Optical device fabrication; Optical devices; Optical polymers; Optical tuning; Photonic crystals; Q factor; Spectroscopy; H1 cavity; InP; deeply etched; photonic crystal;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4703023
