Title :
The evolution of IGBT technology
Author_Institution :
Toshiba Electron., Tokyo, Japan
Abstract :
IGBT (insulated gate bipolar transistor) was first introduced in the early 1980s. It appeared to be an ideal power switching device, it had the fast switching speed and high input impedance of the MOSFET, plus the low saturation characteristics of the bipolar device. One drawback of the IGBT structure is the existence of a `parasitic thyristor´ which is prone to latch up. During ten years of production problems of latch up have been solved, plus the switching and saturation performances have been significantly improved
Keywords :
insulated gate bipolar transistors; power transistors; ´parasitic thyristor´; IGBT technology; fast switching speed; high input impedance; insulated gate bipolar transistor; latch up prevention; low saturation characteristics; power switching device; saturation performances;
Conference_Titel :
New Developments in Power Semiconductor Devices, IEE Colloquium on
Conference_Location :
London
