Three level masking for improved aspect ratio InP-based photonic crystals

Author

Karouta, F. ; Docter, B. ; Geluk, E.J. ; Smit, M.K. ; Kaspar, P.

Author_Institution

Dept. of Electr. Eng., Tech. Univ. Eindhoven, Eindhoven

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

A three-level masking technique is used to improve the aspect ratio of InP-based photonic crystals. The masking consists of a ZEP/Cr/SiO_x stack where the ZEP layer is used to open the Cr which on its turn is a good mask for opening the 500 nm thick SiO_x layer. Subsequently InP is etched in an ICP process using Cl₂:O₂. Very high aspect ratios could be achieved in holes ranging from 130 up to 270 nm in diameter. A maximum aspect ratio of >20 is obtained with the narrowest holes having diameters of 180 and 130 nm.

Keywords

III-V semiconductors; etching; indium compounds; photonic crystals; ICP process; InP; ZEP layer; aspect ratio; etching; photonic crystals; radius 65 nm; radius 90 nm; size 500 nm; three level masking; Chromium; Circuits; Etching; Indium phosphide; Laboratories; Lattices; Lithography; Optical losses; Photonic crystals; Plasma applications; Cl2-O2; ICP etching; InP; aspect ratio; photonic crystals;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703034

Filename

4703034