Title :
Safe Operating Area from Self-Heating, Impact Ionization, and Hot Carrier Reliability for a SiGe HBT on SOI
Author :
Kim, Jonggook ; Sadovnikov, Alexei ; Chen, Tianbing ; Babcock, Jeff
Author_Institution :
Nat. Semicond. Corp., Santa Clara
fDate :
Sept. 30 2007-Oct. 2 2007
Abstract :
A unified electro-thermal safe operating area (SOA) expression is proposed in this paper to evaluate self heating, impact ionization, and hot carrier (HC) degradation effects simultaneously in a full range of bipolar transistor operation. This SOA is demonstrated by experiments for a SiGe hetero-junction bipolar transistor (HBT) fabricated on silicon on insulator (SOI) by extracting principle parameters from discrete transistors and current mirrors. Also, time dependent reliability tests have been fulfilled for several meaningful bias points within this SOA at the fixed VBE and VCE. Avalanche induced HC injection was another important factor to restrict device performance. Finally, the modified electro-thermal SOA by HC reliability is suggested here.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; impact ionisation; semiconductor device reliability; semiconductor optical amplifiers; silicon-on-insulator; HBT; SOA; SOI; SiGe; current mirrors; degradation effects; discrete transistors; hetero-junction bipolar transistor; hot carrier reliability; impact ionization; safe operating area; self-heating; silicon on insulator; time dependent reliability tests; Bipolar transistors; Degradation; Germanium silicon alloys; Heating; Heterojunction bipolar transistors; Hot carriers; Impact ionization; Semiconductor optical amplifiers; Silicon germanium; Silicon on insulator technology; SiGe HBT; hot carrier reliability; impact ionization; safe operating area; self heating;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-1019-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2007.4351876
