DocumentCode
1815239
Title
Phototransistors based on InP/GaAsSb/InGaAs type-II heterostructures
Author
Ahn, H.S. ; Park, M.S. ; Jang, J.H.
Author_Institution
Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., Gwangju
fYear
2008
fDate
25-29 May 2008
Firstpage
1
Lastpage
2
Abstract
Phototransistors based on InP/GaAsSb/InGaAs heterostructures were fabricated and characterized. The fabricated devices with 50-mum diameter exhibited very high optical gain of 154 as well as very low dark current of 17.5 nA, which are promising for highly sensitive photodetection at 1.55 mum optical wavelength.
Keywords
III-V semiconductors; dark conductivity; gallium arsenide; gallium compounds; indium compounds; photodetectors; phototransistors; semiconductor heterojunctions; InP-GaAsSb-InGaAs; current 17.5 nA; dark current; heterostructures; optical gain; optical wavelength; photodetection; phototransistors; wavelength 1.55 mum; Charge carrier processes; Doping; Indium gallium arsenide; Indium phosphide; Optical devices; Optical sensors; Photodetectors; Phototransistors; Spontaneous emission; Voltage; GaAsSb; photodetection; phototransistors; type-II heterostructures;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location
Versailles
ISSN
1092-8669
Print_ISBN
978-1-4244-2258-6
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2008.4703037
Filename
4703037
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