Incorporation of colloidal quantum dots into silicon photonic structures

Author

Qiao, Hong ; Gal, Mike ; Gooding, J. Justin ; Reece, Peter

Author_Institution

Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia

fYear

2010

fDate

22-26 Feb. 2010

Firstpage

55

Lastpage

57

Abstract

Strong room temperature light emission from planar mesoporous silicon microcavities with II-VI compound colloidal quantum dots selectively deposited in the spacer layer has been achieved. We describe the origin of the significant enhancement in emission intensity in terms of cavity modified spontaneous emission. We investigate the role of surface chemistry and pore morphology in achieving efficient light emission from these hybrid devices.

Keywords

II-VI semiconductors; colloidal crystals; elemental semiconductors; etching; mesoporous materials; microcavities; photonic crystals; semiconductor quantum dots; silicon; spontaneous emission; surface chemistry; II-VI compound colloidal quantum dots; Si; anodic etching; cavity modified spontaneous emission; colloidal quantum dots; planar mesoporous silicon microcavities; pore morphology; room temperature light emission; silicon photonic structures; surface chemistry; temperature 293 K to 298 K; Microcavities; Optical films; Optical filters; Quantum dots; Silicon; Surface morphology; Surface treatment; optical microcavity; quantum dots; silicon photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscience and Nanotechnology (ICONN), 2010 International Conference on

Conference_Location

Sydney, NSW

Print_ISBN

978-1-4244-5261-3

Electronic_ISBN

978-1-4244-5262-0

Type

conf

DOI

10.1109/ICONN.2010.6045174

Filename

6045174