A SPICE model for single electronics

Author

Van de Haar, Rudie ; Hoekstra, Jaap ; Klunder, Roelof H.

Author_Institution

Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands

Volume

5

fYear

2002

fDate

2002

Abstract

With single-electron tunneling (SET) technology it is possible to build electronic circuits with extreme low power properties. These SET circuits must therefore operate in the single electronics (current) regime. To simulate SET circuits in this regime, a SPICE model has been written. In contrast to the prescriptions in the so-called orthodox theory of single-electronics, the SPICE model explores the discrete character of the tunnel current and the tunnel condition. In this paper, a brief description of this SPICE model is given. Several known SET circuits are simulated using this SPICE model and are verified with a well known SET device simulator called SIMON, which is based on the orthodox theory of single-electronics.

Keywords

SPICE; circuit simulation; low-power electronics; semiconductor device models; single electron transistors; tunnelling; SET circuits; SIMON SET device simulator; SPICE model; circuit simulation; discrete tunnel condition character; discrete tunnel current character; extreme low power properties; orthodox single-electronics theory; single electronics; single electronics current regime; single-electron tunneling technology; Capacitance; Capacitors; Circuit simulation; Electronic circuits; Pulse shaping methods; SPICE; Space vector pulse width modulation; Tunneling; Voltage; World Wide Web;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on

Print_ISBN

0-7803-7448-7

Type

conf

DOI

10.1109/ISCAS.2002.1010843

Filename

1010843