CoolMOS integral diode: a simple analytical reverse recovery model

Author

Burra, R.K. ; Shenai, Krishna

Author_Institution

Power Electron. Res. Center, Illinois Univ., Chicago, IL, USA

Volume

2

fYear

2003

fDate

15-19 June 2003

Firstpage

834

Abstract

Super-junction technology has pushed the silicon limits to new heights. The CoolMOS™ device is based on the super-junction technology and provides high on-state conductivity with ultra fast switching speed. However, the dynamic behavior of the intrinsic body diode may limit its usage in converter topologies where the body junction diode conducts. In this paper, we report on the static blocking and reverse recovery charge dynamics of the CoolMOS body junction diode. An explanation of the diode reverse recovery mechanism is provided and a model for its charge dynamics is presented and validated with the measured results.

Keywords

p-n junctions; power MOSFET; semiconductor device models; CoolMOS body junction diode; CoolMOS integral diode; charge dynamics; converter topologies; high on-state conductivity; intrinsic body diode; power MOSFET; reverse recovery charge dynamics; reverse recovery model; silicon limits; static blocking dynamics; super-junction technology; ultra fast switching speed; Analytical models; Charge carrier processes; Diodes; Power electronics; Power engineering and energy; Power engineering computing; Silicon; Topology; Two dimensional displays; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialist Conference, 2003. PESC '03. 2003 IEEE 34th Annual

ISSN

0275-9306

Print_ISBN

0-7803-7754-0

Type

conf

DOI

10.1109/PESC.2003.1218165

Filename

1218165