Nano-aperture plasmonic VCSELS

Author

KOYAMA, Pr

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

1

Abstract

We have successfully investigated the selfassembly mechanism for InAs quantum dots (QDs) formed on GaAs(001) by using a unique scanning tunnelling microscope (STM) placed within the molecular beam epitaxy (MBE) growth chamber. The images elucidate the mechanism of QD nucleation, demonstrating directly that not all deposited In is initially incorporated into the lattice, hence providing a large supply of material to rapidly form QDs via islands containing tens of atoms. kinetic Monte Carlo (kMC) simulations based on firstprinciples calculations show that tiny alloy fluctuations, like atomistic point defects, in the InGaAs wetting layer prior to are crucial in determining nucleation sites.

Keywords

III-V semiconductors; Monte Carlo methods; gallium arsenide; molecular beam epitaxial growth; nanotechnology; nucleation; plasmonics; point defects; scanning tunnelling microscopy; self-assembly; semiconductor quantum dots; surface emitting lasers; wetting; GaAs; GaAs(001); InAs-GaAs; MBE; STM; atomistic point defects; first principles calculations; fluctuations; kinetic Monte Carlo simulations; molecular beam epitaxy growth; nanoaperture plasmonic VCSELS; nucleation; quantum dots; scanning tunnelling microscopy; selfassembly mechanism; wetting layer; Atomic layer deposition; Kinetic theory; Lattices; Microscopy; Molecular beam epitaxial growth; Monte Carlo methods; Plasmons; Quantum dots; Tunneling; Vertical cavity surface emitting lasers; GaAs; In-situ; InAs; Quantum Dots; molecular beam epixtaxy; scanning tunneling microscope;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703045

Filename

4703045