Placing single quantum dots in INP photonic crystal microcavities - A route to single and entangled photon pair sources

Author

Poole, P.J. ; Dalacu, D. ; Reimer, M.E. ; Frédérick, S. ; Williams, R.L. ; Aers, G.C. ; Korkusinski, M. ; Hawrylak, P. ; Lapointe, J.

Author_Institution

Inst. for Microstruct. Sci., Nat. Res. Council, Ottawa, ON

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

6

Abstract

We investigate the growth of positioned InAs/InP quantum dots for incorporation into InP-based photonic crystal microcavities. The optical properties of these quantum dots and the photonic crystal microcavities are described, as well as the effect of a lateral electric field on biexciton binding energy. This system is proposed as a scalable route to single and entangled photon pair sources at telecommunications wavelengths.

Keywords

III-V semiconductors; biexcitons; indium compounds; microcavities; photonic crystals; semiconductor growth; semiconductor quantum dots; InAs-InP; biexciton binding energy; entangled photon pair sources; lateral electric; lateral electric field; optical properties; photonic crystal microcavities; positioned quantum dot growth; single quantum dots; telecommunication wavelengths; Indium phosphide; Light sources; Microcavities; Photonic crystals; Quantum computing; Quantum dots; Quantum entanglement; Radiative recombination; Spontaneous emission; Stimulated emission; microcavity; photonic crystal; quantum dot; single photon source;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4703048

Filename

4703048