Recent application of silicon carbide to high power microwave

Author

Morse, A.W. ; Esker, P.M. ; Sriram, S. ; Hawkins, J.J. ; Chen, L.S. ; Ostop, J.A. ; Smith, T.J. ; Davis, C.D. ; Barron, R.R. ; Clarke, R.C. ; Siergiej, R.R. ; Brandt, C.D.

Author_Institution

Electronic Sensors & Syst. Div., Northrop Grumman, Baltimore, MD, USA

Volume

1

fYear

1997

fDate

8-13 June 1997

Firstpage

53

Abstract

Silicon carbide is emerging semiconductor material which is now proven to be especially well suited for high power, high frequency applications. Recent results verify the superiority of silicon carbide over both silicon or gallium arsenide for fabrication of high power transistors from DC through X-band. A silicon carbide UHF television module has demonstrated good signal fidelity at the 2000 W PEP level. S-band transistors show well over 200 watts peak for radar applications, and over 6 W has been obtained at X-band in a silicon carbide MESFET.

Keywords

UHF field effect transistors; microwave field effect transistors; microwave power transistors; power MESFET; power field effect transistors; silicon compounds; static induction transistors; wide band gap semiconductors; 6 to 2000 W; MESFET; S-band transistors; SIT; SiC; UHF television module; X-band transistors; high power microwave devices; high power transistors; radar applications; semiconductor material; Fabrication; Gallium arsenide; MESFETs; Microwave transistors; Packaging; Power generation; Semiconductor materials; Silicon carbide; TV broadcasting; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.604519

Filename

604519