DocumentCode
1816375
Title
Transport phenomena in crystal growth
Author
Ostrach, Simon
Author_Institution
Dept. of Mech. & Aerosp. Eng., Case Western Reserve Univ., Cleveland, OH, USA
fYear
1988
fDate
11-13 May 1988
Firstpage
193
Abstract
Summary form only given, as follows. Some representative vapor, melt, and solution growth techniques are described and the essential transport phenomena for each is identified. Recent research to gain further understanding and a better description of transport phenomena in crystal growth is discussed. The problems of this type include: natural convection in shallow enclosures; mixed force and free convection; convection with heat flux in more than one direction; thermosolutal convection; and thermocapillary flows. The implications of this work to improved crystal quality is indicated.<>
Keywords
capillarity; convection; crystal growth; convection; crystal growth; crystal quality; heat flux; melt growth; natural convection; shallow enclosures; solution growth; thermocapillary flows; thermosolutal convection; transport phenomena; vapour growth; Aerospace engineering; Crystals;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal Phenomena in the Fabrication and Operation of Electronic Components: I-THERM '88, InterSociety Conference on
Conference_Location
Los Angeles, CA, USA
Type
conf
DOI
10.1109/ITHERM.1988.28702
Filename
28702
Link To Document